By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts off with a basic photo of MOS know-how improvement from the gadget and processing issues of view. The serious factor of hot-carrier results is mentioned, besides the equipment engineering facets of this challenge; the rising low-temperature MOS know-how; and the matter of latchup in scaled MOS circuits. a number of equipment types which are compatible to be used in circuit simulators also are defined. The final bankruptcy examines novel electron shipping results saw in ultra-small MOS constructions.
This booklet should still end up beneficial to semiconductor engineers taken with varied points of MOS know-how improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch